All MOSFET. CEI10N4 Datasheet

 

CEI10N4 Datasheet and Replacement


   Type Designator: CEI10N4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 450 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 27 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm
   Package: TO262
 

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CEI10N4 Datasheet (PDF)

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CEI10N4

CEP10N4/CEB10N4CEI10N4/CEF10N4N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP10N4 450V 0.7 10A 10VCEB10N4 450V 0.7 10A 10VCEI10N4 450V 0.7 10A 10VCEF10N4 450V 0.7 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO

Datasheet: CEF12N5 , CEF13N5 , CEP12N5 , CEB12N6 , CEF12N6 , CEP12N6 , CEP10N4 , CEB10N4 , 60N06 , CEF10N4 , CEB10N6 , CEF10N6 , CEP10N6 , CEB09N7G , CEF09N7G , CEP09N7G , CEB08N6A .

History: PMV37ENEA | AOTL66610 | RJK1526DPJ | RQJ0303PGDQA | FK8V03040L | SVGP104R5NASTR | 2N7002EM3T5G

Keywords - CEI10N4 MOSFET datasheet

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