CEI10N4 Specs and Replacement

Type Designator: CEI10N4

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 450 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 27 nS

Cossⓘ - Output Capacitance: 330 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.7 Ohm

Package: TO262

CEI10N4 substitution

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CEI10N4 datasheet

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 cep10n4 ceb10n4 cei10n4 cef10n4.pdf pdf_icon

CEI10N4

CEP10N4/CEB10N4 CEI10N4/CEF10N4 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP10N4 450V 0.7 10A 10V CEB10N4 450V 0.7 10A 10V CEI10N4 450V 0.7 10A 10V CEF10N4 450V 0.7 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO... See More ⇒

Detailed specifications: CEF12N5, CEF13N5, CEP12N5, CEB12N6, CEF12N6, CEP12N6, CEP10N4, CEB10N4, IRLB3034, CEF10N4, CEB10N6, CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, CEP09N7G, CEB08N6A

Keywords - CEI10N4 MOSFET specs

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