All MOSFET. CEF09N7G Datasheet


CEF09N7G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF09N7G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 50 W

Maximum Drain-Source Voltage |Vds|: 700 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 46 nC

Rise Time (tr): 9 nS

Drain-Source Capacitance (Cd): 200 pF

Maximum Drain-Source On-State Resistance (Rds): 1 Ohm

Package: TO220F

CEF09N7G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

CEF09N7G Datasheet (PDF)

1.1. cep09n7g ceb09n7g cef09n7g.pdf Size:419K _cet


CEP09N7G/CEB09N7G CEF09N7G PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7G 700V 1? 9A 10V CEB09N7G 700V 1? 9A 10V CEF09N7G 700V 1? 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)

Datasheet: NTD70N03R , NTE4151P , NTE4153N , NTF2955 , NTF3055-100 , NTF3055L108 , NTF5P03T3 , NTF6P02 , IRF740 , NTGD3148N , NTGD4161P , NTGD4167C , NTGS3130N , NTGS3136P , NTGS3433 , NTGS3441 , NTGS3443 .

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