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CEF09N7G Specs and Replacement


   Type Designator: CEF09N7G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F
 

 CEF09N7G substitution

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CEF09N7G datasheet

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 cep09n7g ceb09n7g cef09n7g.pdf pdf_icon

CEF09N7G

CEP09N7G/CEB09N7G CEF09N7G PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7G 700V 1 9A 10V CEB09N7G 700V 1 9A 10V CEF09N7G 700V 1 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-26... See More ⇒

Detailed specifications: CEP10N4 , CEB10N4 , CEI10N4 , CEF10N4 , CEB10N6 , CEF10N6 , CEP10N6 , CEB09N7G , RU7088R , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 .

Keywords - CEF09N7G MOSFET specs

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