CEF09N7G Datasheet and Replacement
Type Designator: CEF09N7G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
CEF09N7G substitution
CEF09N7G Datasheet (PDF)
cep09n7g ceb09n7g cef09n7g.pdf

CEP09N7G/CEB09N7G CEF09N7GPRELIMINARYN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP09N7G 700V 1 9A 10VCEB09N7G 700V 1 9A 10VCEF09N7G 700V 1 9A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-26
Datasheet: CEP10N4 , CEB10N4 , CEI10N4 , CEF10N4 , CEB10N6 , CEF10N6 , CEP10N6 , CEB09N7G , AON7403 , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 .
History: STH8N80FI | IRLU3105PBF | SI5853CDC | BSZ058N03MSG | CEM8958A | QM0004D | SI6821DQ
Keywords - CEF09N7G MOSFET datasheet
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History: STH8N80FI | IRLU3105PBF | SI5853CDC | BSZ058N03MSG | CEM8958A | QM0004D | SI6821DQ



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