CEF09N7G MOSFET. Datasheet pdf. Equivalent
Type Designator: CEF09N7G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 50 W
Maximum Drain-Source Voltage |Vds|: 700 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 9 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 46 nC
Rise Time (tr): 9 nS
Drain-Source Capacitance (Cd): 200 pF
Maximum Drain-Source On-State Resistance (Rds): 1 Ohm
Package: TO220F
CEF09N7G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEF09N7G Datasheet (PDF)
1.1. cep09n7g ceb09n7g cef09n7g.pdf 
Size:419K _cet
CEP09N7G/CEB09N7G CEF09N7G PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP09N7G 700V 1? 9A 10V CEB09N7G 700V 1? 9A 10V CEF09N7G 700V 1? 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)
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