CEB08N6A Specs and Replacement

Type Designator: CEB08N6A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO263

CEB08N6A substitution

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CEB08N6A datasheet

 ..1. Size:375K  cet
 cep08n6a ceb08n6a cef08n6a.pdf pdf_icon

CEB08N6A

CEP08N6A/CEB08N6A CEF08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N6A 600V 1.25 7.5A 10V CEB08N6A 600V 1.25 7.5A 10V CEF08N6A 600V 1.25 7.5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G CEB SERIES CEP SERIES CE... See More ⇒

 8.1. Size:434K  cet
 cep08n8 ceb08n8 cef08n8.pdf pdf_icon

CEB08N6A

CEP08N8/CEB08N8 CEF08N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP08N8 800V 1.55 8A 10V CEB08N8 800V 1.55 8A 10V CEF08N8 800V 1.55 8A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES ... See More ⇒

Detailed specifications: CEI10N4, CEF10N4, CEB10N6, CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, CEP09N7G, AOD4184A, CEF08N6A, CEP08N6A, CEF1186, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195

Keywords - CEB08N6A MOSFET specs

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