All MOSFET. CEB08N6A Datasheet

 

CEB08N6A Datasheet and Replacement


   Type Designator: CEB08N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7.5 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO263
 

 CEB08N6A substitution

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CEB08N6A Datasheet (PDF)

 ..1. Size:375K  cet
 cep08n6a ceb08n6a cef08n6a.pdf pdf_icon

CEB08N6A

CEP08N6A/CEB08N6ACEF08N6AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP08N6A 600V 1.25 7.5A 10VCEB08N6A 600V 1.25 7.5A 10VCEF08N6A 600V 1.25 7.5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GCEB SERIESCEP SERIES CE

 8.1. Size:434K  cet
 cep08n8 ceb08n8 cef08n8.pdf pdf_icon

CEB08N6A

CEP08N8/CEB08N8CEF08N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP08N8 800V 1.55 8A 10VCEB08N8 800V 1.55 8A 10VCEF08N8 800V 1.55 8A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIES

Datasheet: CEI10N4 , CEF10N4 , CEB10N6 , CEF10N6 , CEP10N6 , CEB09N7G , CEF09N7G , CEP09N7G , HY1906P , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 .

History: AP9978AGP-HF | STB45NF06 | CEB02N65G | WML10N70D1 | SWT50N65LF | IPW50R350CP | CMUDM7001

Keywords - CEB08N6A MOSFET datasheet

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