CEF1186 Datasheet and Replacement
Type Designator: CEF1186
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 152 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: TO220F
CEF1186 substitution
CEF1186 Datasheet (PDF)
cep1186 ceb1186 cef1186.pdf
CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
cep1195 ceb1195 cef1195.pdf
CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)
Datasheet: CEF10N6 , CEP10N6 , CEB09N7G , CEF09N7G , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , IRFP064N , CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L .
Keywords - CEF1186 MOSFET datasheet
CEF1186 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and datasheets
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