All MOSFET. CEF1186 Datasheet

 

CEF1186 Datasheet and Replacement


   Type Designator: CEF1186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 152 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
   Package: TO220F
 

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CEF1186 Datasheet (PDF)

 ..1. Size:433K  cet
 cep1186 ceb1186 cef1186.pdf pdf_icon

CEF1186

CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

 9.1. Size:432K  cet
 cep1195 ceb1195 cef1195.pdf pdf_icon

CEF1186

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

Datasheet: CEF10N6 , CEP10N6 , CEB09N7G , CEF09N7G , CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , 5N50 , CEB1186 , CEP1186 , CEB1195 , CEF1195 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L .

History: MTC4501Q8 | IXTM7N50 | ME4920 | SSM6N17FU | BRCS1C0P06DSC

Keywords - CEF1186 MOSFET datasheet

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