CEF1186 Specs and Replacement

Type Designator: CEF1186

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 152 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO220F

CEF1186 substitution

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CEF1186 datasheet

 ..1. Size:433K  cet
 cep1186 ceb1186 cef1186.pdf pdf_icon

CEF1186

CEP1186/CEB1186 CEF1186 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP1186 800V 2.3 6A 10V CEB1186 800V 2.3 6A 10V CEF1186 800V 2.3 6A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK)... See More ⇒

 9.1. Size:432K  cet
 cep1195 ceb1195 cef1195.pdf pdf_icon

CEF1186

CEP1195/CEB1195 CEF1195 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP1195 900V 2.75 5A 10V CEB1195 900V 2.75 5A 10V CEF1195 900V 2.75 5A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) ... See More ⇒

Detailed specifications: CEF10N6, CEP10N6, CEB09N7G, CEF09N7G, CEP09N7G, CEB08N6A, CEF08N6A, CEP08N6A, IRFP064N, CEB1186, CEP1186, CEB1195, CEF1195, CEP1195, CEB21A2, CEB3060, CEB30N15L

Keywords - CEF1186 MOSFET specs

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