All MOSFET. CEF1195 Datasheet

 

CEF1195 Datasheet and Replacement


   Type Designator: CEF1195
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 21.5 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.75 Ohm
   Package: TO220F
 

 CEF1195 substitution

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CEF1195 Datasheet (PDF)

 ..1. Size:432K  cet
 cep1195 ceb1195 cef1195.pdf pdf_icon

CEF1195

CEP1195/CEB1195 CEF1195N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1195 900V 2.75 5A 10VCEB1195 900V 2.75 5A 10VCEF1195 900V 2.75 5A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

 9.1. Size:433K  cet
 cep1186 ceb1186 cef1186.pdf pdf_icon

CEF1195

CEP1186/CEB1186CEF1186N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP1186 800V 2.3 6A 10VCEB1186 800V 2.3 6A 10VCEF1186 800V 2.3 6A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

Datasheet: CEP09N7G , CEB08N6A , CEF08N6A , CEP08N6A , CEF1186 , CEB1186 , CEP1186 , CEB1195 , IRF3205 , CEP1195 , CEB21A2 , CEB3060 , CEB30N15L , CEB3120 , CEB3205 , CEB4060A , CEB4060AL .

History: 2N6768JANTX | SM7304ESKP | SSP6N90A | HSP120N08

Keywords - CEF1195 MOSFET datasheet

 CEF1195 cross reference
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