All MOSFET. CEP21A2 Datasheet

 

CEP21A2 Datasheet and Replacement


   Type Designator: CEP21A2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 216 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO220
 

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CEP21A2 Datasheet (PDF)

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CEP21A2

CEP21A2/CEB21A2N-Channel Enhancement Mode Field Effect TransistorFEATURES20V, 25A,RDS(ON) = 40m @VGS = 4.5V. RDS(ON) = 70m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability. DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEB6042 , CEB6056 , CEB6060L , CEB6060N , CEB6086L , CEB60N06G , CEB60N10 , CEB6186 , IRFB4115 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 .

History: OSG65R099TT3ZF | FDS7066N7 | STN1HNK60 | LSD65R380GF | IPD60R450E6 | HAT1047RJ | ME80N08AF-G

Keywords - CEP21A2 MOSFET datasheet

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