All MOSFET. CEP3120 Datasheet

 

CEP3120 Datasheet and Replacement


   Type Designator: CEP3120
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220
 

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CEP3120 Datasheet (PDF)

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 cep3120 ceb3120.pdf pdf_icon

CEP3120

CEP3120/CEB3120N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 40A,RDS(ON) = 15m @VGS = 10V. RDS(ON) = 22m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

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CEP3120

CEP3100N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 47A,RDS(ON) = 12m @VGS = 10V. RDS(ON) = 21m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 package.GCEP SERIESSTO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Datasheet: CEB6086L , CEB60N06G , CEB60N10 , CEB6186 , CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , 7N65 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , CEP540N , CEP6036 .

History: BLS65R041F-W | SM6107PSU | BL9N20-D | FDS4897A | AO4453 | TSM3548DCX6 | SIHFBC30A

Keywords - CEP3120 MOSFET datasheet

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