CEP4060AL Datasheet and Replacement

CEP4060AL/CEB4060ALN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc

CEP4060A/CEB4060AN-Channel Enhancement Mode Field Effect Transistor FEATURES60V, 17A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Pb Free Producthttp://www.ncepower.com NCEP4060EQNCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high

http://www.ncepower.com NCEP4065QUNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse