CEP4060AL Specs and Replacement
Type Designator: CEP4060AL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7 nS
Cossⓘ - Output Capacitance: 120 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO220
CEP4060AL substitution
- MOSFET ⓘ Cross-Reference Search
CEP4060AL datasheet
cep4060al ceb4060al.pdf
CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc... See More ⇒
cep4060a ceb4060a.pdf
CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒
ncep4060eq.pdf
Pb Free Product http //www.ncepower.com NCEP4060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high... See More ⇒
ncep4065qu.pdf
http //www.ncepower.com NCEP4065QU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse... See More ⇒
Detailed specifications: CEB6186, CEP21A2, CEP3060, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, 2SK3878, CEP45N10, CEP50N10, CEP540L, CEP540N, CEP6036, CEP6042, CEP6056, CEP6060L
Keywords - CEP4060AL MOSFET specs
CEP4060AL cross reference
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