CEP4060AL. Аналоги и основные параметры
Наименование производителя: CEP4060AL
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 43 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 60 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 17 A
Tj ⓘ - Максимальная температура канала: 175 °C
Электрические характеристики
tr ⓘ - Время нарастания: 7 ns
Cossⓘ - Выходная емкость: 120 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.075 Ohm
Тип корпуса: TO220
Аналог (замена) для CEP4060AL
- подборⓘ MOSFET транзистора по параметрам
CEP4060AL даташит
cep4060al ceb4060al.pdf
CEP4060AL/CEB4060AL N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A,RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5.0V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc
cep4060a ceb4060a.pdf
CEP4060A/CEB4060A N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 17A, RDS(ON) = 85m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
ncep4060eq.pdf
Pb Free Product http //www.ncepower.com NCEP4060EQ NCE N-Channel Super Trench Power MOSFET Description The NCEP4060EQ uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high
ncep4065qu.pdf
http //www.ncepower.com NCEP4065QU NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP4065QU uses Super Trench technology that is VDS =40V,ID =65A uniquely optimized to provide the most efficient high RDS(ON)=2.2m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=3.3m (typical) @ VGS=4.5V switching power losse
Другие IGBT... CEB6186, CEP21A2, CEP3060, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, 2SK3878, CEP45N10, CEP50N10, CEP540L, CEP540N, CEP6036, CEP6042, CEP6056, CEP6060L
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Список транзисторов
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