CEP45N10 Specs and Replacement

Type Designator: CEP45N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 44 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm

Package: TO220

CEP45N10 substitution

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CEP45N10 datasheet

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 cep45n10 ceb45n10.pdf pdf_icon

CEP45N10

CEP45N10/CEB45N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 44A, RDS(ON) = 39m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

Detailed specifications: CEP21A2, CEP3060, CEP30N15L, CEP3100, CEP3120, CEP3205, CEP4060A, CEP4060AL, STP75NF75, CEP50N10, CEP540L, CEP540N, CEP6036, CEP6042, CEP6056, CEP6060L, CEP6060N

Keywords - CEP45N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.