All MOSFET. CEP45N10 Datasheet

 

CEP45N10 Datasheet and Replacement


   Type Designator: CEP45N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 44 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
   Package: TO220
 

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CEP45N10 Datasheet (PDF)

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CEP45N10

CEP45N10/CEB45N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 44A, RDS(ON) = 39m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

Datasheet: CEP21A2 , CEP3060 , CEP30N15L , CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , 12N60 , CEP50N10 , CEP540L , CEP540N , CEP6036 , CEP6042 , CEP6056 , CEP6060L , CEP6060N .

History: 7N60L-TF3-T | AFN3015S | HAT1125H | HM2301BSR | AOTL66401 | DH100N03B13 | SUP60N10-16L

Keywords - CEP45N10 MOSFET datasheet

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