CEP540N Datasheet and Replacement
Type Designator: CEP540N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 140 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 36 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 196 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
Package: TO220
CEP540N substitution
CEP540N Datasheet (PDF)
cep540n ceb540n cef540n.pdf

CEP540N/CEB540N CEF540NN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 36A, RDS(ON) = 53m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-220 & TO-263 package.GCEB SERIES CEF SERIESCEP SERIESTO-263(DD-PAK) TO-220F STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C
cep540l ceb540l cef540l.pdf

CEP540L/CEB540L CEF540LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 36A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIES CEF SERIESCEP SERIESTO-263(DD-PAK) TO-220F STO-220ABS
Datasheet: CEP3100 , CEP3120 , CEP3205 , CEP4060A , CEP4060AL , CEP45N10 , CEP50N10 , CEP540L , IRF4905 , CEP6036 , CEP6042 , CEP6056 , CEP6060L , CEP6060N , CEP6086 , CEP6086L , CEP60N06G .
History: STW6NA80
Keywords - CEP540N MOSFET datasheet
CEP540N cross reference
CEP540N equivalent finder
CEP540N lookup
CEP540N substitution
CEP540N replacement
History: STW6NA80



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