All MOSFET. CEP60N06G Datasheet

 

CEP60N06G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEP60N06G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 125 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 495 pF

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO220

CEP60N06G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEP60N06G Datasheet (PDF)

1.1. cep60n06g ceb60n06g.pdf Size:439K _cet

CEP60N06G
CEP60N06G

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Param

4.1. cep60n10 ceb60n10.pdf Size:395K _cet

CEP60N06G
CEP60N06G

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Param

 5.1. cep603al ceb603al.pdf Size:520K _upd-mosfet

CEP60N06G
CEP60N06G



5.2. ncep60t12a.pdf Size:487K _update-mosfet

CEP60N06G
CEP60N06G

Pb Free Product http://www.ncepower.com NCEP60T12A NCE N-Channel Super Trench Power MOSFET Description The NCEP60T12A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(O

 5.3. cep6060n ceb6060n.pdf Size:420K _cet

CEP60N06G
CEP60N06G

CEP6060N/CEB6060N N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 42A, RDS(ON) = 25m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet

5.4. cep6042 ceb6042.pdf Size:421K _cet

CEP60N06G
CEP60N06G

CEP6042/CEB6042 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 118A, RDS(ON) = 5m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise

 5.5. cep6086l ceb6086l.pdf Size:434K _cet

CEP60N06G
CEP60N06G

CEP6086L/CEB6086L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 72A, RDS(ON) = 10m? @VGS = 10V. RDS(ON) = 13.5m? @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM

5.6. cep6086 ceb6086.pdf Size:413K _cet

CEP60N06G
CEP60N06G

CEP6086/CEB6086 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 70A, RDS(ON) = 9.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramete

5.7. cep6056 ceb6056.pdf Size:629K _cet

CEP60N06G
CEP60N06G

CEP6056/CEB6056 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 100A, RDS(ON) = 6.2m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Paramet

5.8. cep6036 ceb6036.pdf Size:421K _cet

CEP60N06G
CEP60N06G

CEP6036/CEB6036 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 135A, RDS(ON) = 4.6m? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwi

5.9. cep6060l ceb6060l.pdf Size:399K _cet

CEP60N06G
CEP60N06G

CEP6060L/CEB6060L N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 52.4A,RDS(ON) = 21m? @VGS = 10V. RDS(ON) = 25m? @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C un

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