All MOSFET. CEP60N06G Equivalents Search

CEP60N06G/CEB60N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 60A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

CEP60N10/CEB60N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 57A, RDS(ON) = 24m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted ... See More ⇒

http //www.ncepower.com NCEP60ND30AG NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are ... See More ⇒

http //www.ncepower.com NCEP60ND60G NCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND60G uses Super Trench technology that is V =60V,I =55A DS D uniquely optimized to provide the most efficient high R =7.8m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and Excellent gate charge x R product(FOM) DS(on) switchi... See More ⇒