CEP60N06G Datasheet and Replacement. Cross Reference Search

CEP60N06G Datasheet (PDF)

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cep60n06g ceb60n06g.pdf pdf_icon

CEP60N06G/CEB60N06GN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 60A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

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cep60n10 ceb60n10.pdf pdf_icon

CEP60N10/CEB60N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 57A, RDS(ON) = 24m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted

8.2. Size:310K ncepower
ncep60nd30ag.pdf pdf_icon

http://www.ncepower.com NCEP60ND30AGNCE N-Channel Super Trench Power MOSFET Description General Features The NCEP60ND30AG uses Super Trench technology that is VDS =60V,ID =30A uniquely optimized to provide the most efficient high RDS(ON)=12m (typical) @ VGS=10V frequency switching performance. Both conduction and RDS(ON)=15m (typical) @ VGS=4.5V switching power losses are

8.3. Size:602K ncepower
ncep60nd60g.pdf pdf_icon

http://www.ncepower.com NCEP60ND60GNCE N-Channel Super Trench Power MOSFETDescriptionGeneral FeaturesThe NCEP60ND60G uses Super Trench technology that is V =60V,I =55ADS Duniquely optimized to provide the most efficient highR =7.8m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and Excellent gate charge x R product(FOM)DS(on)switchi

Datasheet: CEP540N , CEP6036 , CEP6042 , CEP6056 , CEP6060L , CEP6060N , CEP6086 , CEP6086L , IRFB3607 , CEP60N10 , CEP6186 , CEF630N , CEF730G , CEF740A , CEF740G , CEF80N15 , CEF830G .