All MOSFET. CEP6186 Datasheet

 

CEP6186 Datasheet and Replacement


   Type Designator: CEP6186
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 33 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 125 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO220
 

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CEP6186 Datasheet (PDF)

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CEP6186

CEP6186/CEB6186N-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 33A, RDS(ON) = 25m @VGS = 10V. RDS(ON) = 32m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK) STO-220ABSOLUTE MAXIMUM RATINGS Tc = 2

Datasheet: CEP6042 , CEP6056 , CEP6060L , CEP6060N , CEP6086 , CEP6086L , CEP60N06G , CEP60N10 , RFP50N06 , CEF630N , CEF730G , CEF740A , CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G .

History: VBE1101M | FDS7066N7 | AON6906 | SSM6L35FE | STP605D | SVSP20NF60TD2

Keywords - CEP6186 MOSFET datasheet

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