CEF630N Specs and Replacement

Type Designator: CEF630N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO220F

CEF630N substitution

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CEF630N datasheet

 ..1. Size:369K  cet
 cep630n ceb630n cef630n.pdf pdf_icon

CEF630N

CEP630N/CEB630N CEF630N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP630N 200V 0.36 9A 10V CEB630N 200V 0.36 9A 10V CEF630N 200V 0.36 9A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) ... See More ⇒

Detailed specifications: CEP6056, CEP6060L, CEP6060N, CEP6086, CEP6086L, CEP60N06G, CEP60N10, CEP6186, 12N60, CEF730G, CEF740A, CEF740G, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs