All MOSFET. CEF630N Datasheet

 

CEF630N Datasheet and Replacement


   Type Designator: CEF630N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 130 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F
 

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CEF630N Datasheet (PDF)

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CEF630N

CEP630N/CEB630N CEF630NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP630N 200V 0.36 9A 10VCEB630N 200V 0.36 9A 10VCEF630N 200V 0.36 9A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIESCEP SERIES CEF SERIESTO-263(DD-PAK)

Datasheet: CEP6056 , CEP6060L , CEP6060N , CEP6086 , CEP6086L , CEP60N06G , CEP60N10 , CEP6186 , IRF1010E , CEF730G , CEF740A , CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G , CEF840L .

History: IRF3709S | RQ6P015SP | UF830KG-TN3-R | FSF055R | CEP60N10 | SVG108R5NAD

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