CEF740A Datasheet and Replacement
Type Designator: CEF740A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 48 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO220F
CEF740A substitution
CEF740A Datasheet (PDF)
cep740a ceb740a cef740a.pdf

CEP740A/CEB740ACEF740AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP740A 400V 0.55 10A 10VCEB740A 400V 0.55 10A 10VCEF740A 400V 0.55 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(D
cep740g ceb740g cef740g.pdf

CEP740G/CEB740G CEF740GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP740G 400V 0.55 10A 10VCEB740G 400V 0.55 10A 10VCEF740G 400V 0.55 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIEST
Datasheet: CEP6060N , CEP6086 , CEP6086L , CEP60N06G , CEP60N10 , CEP6186 , CEF630N , CEF730G , TK10A60D , CEF740G , CEF80N15 , CEF830G , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N .
History: P5503QV | KNF4540A | GSM2341 | DH028N03D | DH028N03 | FIR18N65FG | GSM2367AS
Keywords - CEF740A MOSFET datasheet
CEF740A cross reference
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History: P5503QV | KNF4540A | GSM2341 | DH028N03D | DH028N03 | FIR18N65FG | GSM2367AS



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