CEF740G Specs and Replacement

Type Designator: CEF740G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 190 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm

Package: TO220F

CEF740G substitution

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CEF740G datasheet

 ..1. Size:413K  cet
 cep740g ceb740g cef740g.pdf pdf_icon

CEF740G

CEP740G/CEB740G CEF740G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP740G 400V 0.55 10A 10V CEB740G 400V 0.55 10A 10V CEF740G 400V 0.55 10A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES T... See More ⇒

 8.1. Size:434K  cet
 cep740a ceb740a cef740a.pdf pdf_icon

CEF740G

CEP740A/CEB740A CEF740A N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP740A 400V 0.55 10A 10V CEB740A 400V 0.55 10A 10V CEF740A 400V 0.55 10A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. G S CEB SERIES CEP SERIES CEF SERIES TO-263(D... See More ⇒

Detailed specifications: CEP6086, CEP6086L, CEP60N06G, CEP60N10, CEP6186, CEF630N, CEF730G, CEF740A, IRFB3607, CEF80N15, CEF830G, CEF840A, CEF840G, CEF840L, CEF85N75, CEB630N, CEB730G

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.