All MOSFET. CEF830G Datasheet

 

CEF830G Datasheet and Replacement


   Type Designator: CEF830G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO220F
 

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CEF830G Datasheet (PDF)

 ..1. Size:396K  cet
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CEF830G

CEP830G/CEB830G CEF830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP830G 500V 1.5 5A 10VCEB830G 500V 1.5 5A 10VCEF830G 500V 1.5 5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(

Datasheet: CEP60N06G , CEP60N10 , CEP6186 , CEF630N , CEF730G , CEF740A , CEF740G , CEF80N15 , STP80NF70 , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A .

History: GSM3310W | SLP2N65UZ | NDS9430 | FDP6035AL | IXTM14N80 | PHD45N03LT | SFR9120

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