All MOSFET. CEF830G Datasheet

 

CEF830G MOSFET. Datasheet pdf. Equivalent

Type Designator: CEF830G

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 42 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 5 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 90 pF

Maximum Drain-Source On-State Resistance (Rds): 1.5 Ohm

Package: TO220F

CEF830G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEF830G Datasheet (PDF)

1.1. cep830g ceb830g cef830g.pdf Size:396K _cet

CEF830G
CEF830G

CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP830G 500V 1.5? 5A 10V CEB830G 500V 1.5? 5A 10V CEF830G 500V 1.5? 5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(DD-PAK) T

Datasheet: CEP60N06G , CEP60N10 , CEP6186 , CEF630N , CEF730G , CEF740A , CEF740G , CEF80N15 , STP75NF75 , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A .

 


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