CEF830G PDF and Equivalents Search

 

CEF830G Specs and Replacement

Type Designator: CEF830G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 90 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO220F

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CEF830G datasheet

 ..1. Size:396K  cet
 cep830g ceb830g cef830g.pdf pdf_icon

CEF830G

CEP830G/CEB830G CEF830G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP830G 500V 1.5 5A 10V CEB830G 500V 1.5 5A 10V CEF830G 500V 1.5 5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

Detailed specifications: CEP60N06G, CEP60N10, CEP6186, CEF630N, CEF730G, CEF740A, CEF740G, CEF80N15, IRF530, CEF840A, CEF840G, CEF840L, CEF85N75, CEB630N, CEB730G, CEB73A3G, CEB740A

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