CEB740A Datasheet and Replacement
Type Designator: CEB740A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 150 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 135 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
Package: TO263
CEB740A substitution
CEB740A Datasheet (PDF)
cep740a ceb740a cef740a.pdf

CEP740A/CEB740ACEF740AN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP740A 400V 0.55 10A 10VCEB740A 400V 0.55 10A 10VCEF740A 400V 0.55 10A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.GSCEB SERIESCEP SERIES CEF SERIESTO-263(D
cep740g ceb740g cef740g.pdf

CEP740G/CEB740G CEF740GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP740G 400V 0.55 10A 10VCEB740G 400V 0.55 10A 10VCEF740G 400V 0.55 10A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIEST
Datasheet: CEF830G , CEF840A , CEF840G , CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , 18N50 , CEB740G , CEB75A3 , CEB75N06 , CEB75N06G , CEB75N10 , CEB80N15 , CEB830G , CEB83A3 .
History: RTF015N03 | FIR12N80FG | SIHFB9N65A | SUM110N08-07P | AON7514 | 2SK1609 | 2SK2231
Keywords - CEB740A MOSFET datasheet
CEB740A cross reference
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History: RTF015N03 | FIR12N80FG | SIHFB9N65A | SUM110N08-07P | AON7514 | 2SK1609 | 2SK2231



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