CEB75N06 PDF and Equivalents Search

 

CEB75N06 PDF Specs and Replacement


   Type Designator: CEB75N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 87 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 5.5 nS
   Cossⓘ - Output Capacitance: 735 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263
 

 CEB75N06 substitution

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CEB75N06 PDF Specs

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cep75n06 ceb75n06.pdf pdf_icon

CEB75N06

CEP75N06/CEB75N06 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 87A, RDS(ON) = 12m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted Pa... See More ⇒

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cep75n06g ceb75n06g.pdf pdf_icon

CEB75N06

CEP75N06G/CEB75N06G N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 75A, RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise no... See More ⇒

 8.1. Size:857K  cet
cep75n10 ceb75n10.pdf pdf_icon

CEB75N06

CEP75N10/CEB75N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 72A, RDS(ON) = 15m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherw... See More ⇒

 9.1. Size:394K  cet
cep75a3 ceb75a3.pdf pdf_icon

CEB75N06

CEP75A3/CEB75A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 69A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 13m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 2... See More ⇒

Detailed specifications: CEF840L , CEF85N75 , CEB630N , CEB730G , CEB73A3G , CEB740A , CEB740G , CEB75A3 , IRF1407 , CEB75N06G , CEB75N10 , CEB80N15 , CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G .

Keywords - CEB75N06 MOSFET specs

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