CEB85A3 Specs and Replacement
Type Designator: CEB85A3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 89 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 90 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 335 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO263
CEB85A3 substitution
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CEB85A3 datasheet
cep85a3 ceb85a3.pdf
CEP85A3/CEB85A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-263 & TO-220 package. G CEB SERIES CEP SERIES S TO-263(DD-PAK) TO-220 ABSOLUTE MAXIMUM RATINGS Tc = 25... See More ⇒
cep85n75v ceb85n75v.pdf
CEP85N75V/CEB85N75V N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE... See More ⇒
cep85n75 ceb85n75 cef85n75.pdf
CEP85N75/CEB85N75 CEF85N75 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP85N75 75V 12m 86A 10V CEB85N75 75V 12m 86A 10V CEF85N75 75V 12m 86A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for through... See More ⇒
Detailed specifications: CEB80N15, CEB830G, CEB83A3, CEB83A3G, CEB840A, CEB840G, CEB840L, CEB84A4, STF13NM60N, CEB85N75, CEB85N75V, CEB9060N, CEP630N, CEP730G, CEP73A3G, CEP740A, CEP740G
Keywords - CEB85A3 MOSFET specs
CEB85A3 cross reference
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