CEB85N75 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEB85N75
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 86 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 90 nC
trⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 715 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: TO263
CEB85N75 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEB85N75 Datasheet (PDF)
cep85n75 ceb85n75 cef85n75.pdf
CEP85N75/CEB85N75CEF85N75N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP85N75 75V 12m 86A 10VCEB85N75 75V 12m 86A 10VCEF85N75 75V 12m 86A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for through
cep85n75v ceb85n75v.pdf
CEP85N75V/CEB85N75VN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE
cep85a3 ceb85a3.pdf
CEP85A3/CEB85A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: WMM14N60C4 | SIHA15N60E
History: WMM14N60C4 | SIHA15N60E
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918