All MOSFET. CEB85N75 Datasheet

 

CEB85N75 Datasheet and Replacement


   Type Designator: CEB85N75
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 86 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 715 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263
 

 CEB85N75 substitution

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CEB85N75 Datasheet (PDF)

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CEB85N75

CEP85N75/CEB85N75CEF85N75N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP85N75 75V 12m 86A 10VCEB85N75 75V 12m 86A 10VCEF85N75 75V 12m 86A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for through

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CEB85N75

CEP85N75V/CEB85N75VN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES75V, 85A, RDS(ON) = 12m @VGS = 12V. RDS(ON) = 13m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE

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CEB85N75

CEP85A3/CEB85A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 90A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-263 & TO-220 package.GCEB SERIESCEP SERIESSTO-263(DD-PAK)TO-220ABSOLUTE MAXIMUM RATINGS Tc = 25

Datasheet: CEB830G , CEB83A3 , CEB83A3G , CEB840A , CEB840G , CEB840L , CEB84A4 , CEB85A3 , AON6380 , CEB85N75V , CEB9060N , CEP630N , CEP730G , CEP73A3G , CEP740A , CEP740G , CEP75A3 .

History: APT3580BN | RSR030N06

Keywords - CEB85N75 MOSFET datasheet

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