All MOSFET. CEB9060N Datasheet

 

CEB9060N Datasheet and Replacement


   Type Designator: CEB9060N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 90 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11.9 nS
   Cossⓘ - Output Capacitance: 765 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: TO263
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CEB9060N Datasheet (PDF)

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CEB9060N

CEP9060N/CEB9060N CEF9060NN-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEP9060N 55V 10.5m 90A 10VCEB9060N 55V 10.5m 90A 10VCEF9060N 55V 10.5m 90A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-263 package & TO-220F full-pak for

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History: VBNC1303 | IRFS4010PBF

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