CEB9060N Specs and Replacement

Type Designator: CEB9060N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 166 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11.9 nS

Cossⓘ - Output Capacitance: 765 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: TO263

CEB9060N substitution

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CEB9060N datasheet

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CEB9060N

CEP9060N/CEB9060N CEF9060N N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEP9060N 55V 10.5m 90A 10V CEB9060N 55V 10.5m 90A 10V CEF9060N 55V 10.5m 90A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package & TO-220F full-pak for ... See More ⇒

Detailed specifications: CEB83A3G, CEB840A, CEB840G, CEB840L, CEB84A4, CEB85A3, CEB85N75, CEB85N75V, 8N60, CEP630N, CEP730G, CEP73A3G, CEP740A, CEP740G, CEP75A3, CEP75N06, CEP75N06G

Keywords - CEB9060N MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.