CEP73A3G Specs and Replacement

Type Designator: CEP73A3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO220

CEP73A3G substitution

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CEP73A3G datasheet

 ..1. Size:394K  cet
 cep73a3g ceb73a3g.pdf pdf_icon

CEP73A3G

CEP73A3G/CEB73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 62A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) S TO-220 ABSOLUTE MAXIMUM R... See More ⇒

 9.1. Size:414K  cet
 cep730g ceb730g cef730g.pdf pdf_icon

CEP73A3G

CEP730G/CEB730G CEF730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP730G 400V 1 5.5A 10V CEB730G 400V 1 5.5A 10V CEF730G 400V 1 5.5A e 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. G S CEB SERIES CEP SERIES CEF SERIES TO-263(... See More ⇒

Detailed specifications: CEB840L, CEB84A4, CEB85A3, CEB85N75, CEB85N75V, CEB9060N, CEP630N, CEP730G, AO3400A, CEP740A, CEP740G, CEP75A3, CEP75N06, CEP75N06G, CEP75N10, CEP80N15, CEP830G

Keywords - CEP73A3G MOSFET specs

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