All MOSFET. CEP80N15 Datasheet

 

CEP80N15 Datasheet and Replacement


   Type Designator: CEP80N15
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 76 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
   Package: TO220
 

 CEP80N15 substitution

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CEP80N15 Datasheet (PDF)

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CEP80N15

CEP80N15/CEB80N15CEF80N15N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP80N15 150V 19m 76A 10VCEB80N15 150V 19m 76A 10VCEF80N15 150V 19m 76A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead-free plating ; RoHS compliant.TO-220 & TO-263 & TO-220F full-pak

Datasheet: CEP730G , CEP73A3G , CEP740A , CEP740G , CEP75A3 , CEP75N06 , CEP75N06G , CEP75N10 , IRF1405 , CEP830G , CEP83A3 , CEP83A3G , CEP840A , CEP840G , CEP840L , CEP84A4 , CEP85A3 .

History: MPF4393 | SSC8033GS6

Keywords - CEP80N15 MOSFET datasheet

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