CEP80N15 Specs and Replacement

Type Designator: CEP80N15

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 76 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 455 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm

Package: TO220

CEP80N15 substitution

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CEP80N15 datasheet

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 cep80n15 ceb80n15 cef80n15.pdf pdf_icon

CEP80N15

CEP80N15/CEB80N15 CEF80N15 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES Type VDSS RDS(ON) ID @VGS CEP80N15 150V 19m 76A 10V CEB80N15 150V 19m 76A 10V CEF80N15 150V 19m 76A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead-free plating ; RoHS compliant. TO-220 & TO-263 & TO-220F full-pak... See More ⇒

Detailed specifications: CEP730G, CEP73A3G, CEP740A, CEP740G, CEP75A3, CEP75N06, CEP75N06G, CEP75N10, IRF830, CEP830G, CEP83A3, CEP83A3G, CEP840A, CEP840G, CEP840L, CEP84A4, CEP85A3

Keywords - CEP80N15 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs