CEP830G Datasheet and Replacement
Type Designator: CEP830G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 90 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
CEP830G substitution
CEP830G Datasheet (PDF)
cep830g ceb830g cef830g.pdf

CEP830G/CEB830G CEF830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP830G 500V 1.5 5A 10VCEB830G 500V 1.5 5A 10VCEF830G 500V 1.5 5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(
cep83a3g ceb83a3g.pdf

CEP83A3G/CEB83A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 102A, RDS(ON) = 4.2 m @VGS = 10V. RDS(ON) = 6.2 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE
cep83a3 ceb83a3.pdf

CEP83A3/CEB83A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T
Datasheet: CEP73A3G , CEP740A , CEP740G , CEP75A3 , CEP75N06 , CEP75N06G , CEP75N10 , CEP80N15 , 60N06 , CEP83A3 , CEP83A3G , CEP840A , CEP840G , CEP840L , CEP84A4 , CEP85A3 , CEP85N75 .
Keywords - CEP830G MOSFET datasheet
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History: SHD226314 | FHU9540C



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