CEP83A3 MOSFET. Datasheet pdf. Equivalent
Type Designator: CEP83A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 100 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3 V
Maximum Drain Current |Id|: 100 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 53 nC
Rise Time (tr): 22 nS
Drain-Source Capacitance (Cd): 980 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
Package: TO220
CEP83A3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEP83A3 Datasheet (PDF)
cep83a3 ceb83a3.pdf

CEP83A3/CEB83A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 100A, RDS(ON) = 5.3m @VGS = 10V. RDS(ON) = 8.0m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS T
cep83a3g ceb83a3g.pdf

CEP83A3G/CEB83A3GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES30V, 102A, RDS(ON) = 4.2 m @VGS = 10V. RDS(ON) = 6.2 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE
cep830g ceb830g cef830g.pdf

CEP830G/CEB830G CEF830GN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURESType VDSS RDS(ON) ID @VGSCEP830G 500V 1.5 5A 10VCEB830G 500V 1.5 5A 10VCEF830G 500V 1.5 5A e 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.GSCEB SERIES CEP SERIES CEF SERIESTO-263(
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF1405 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .



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