All MOSFET. CEP93A3 Datasheet

 

CEP93A3 Datasheet and Replacement


   Type Designator: CEP93A3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 980 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO220
 

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CEP93A3 Datasheet (PDF)

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CEP93A3

CEP93A3/CEB93A3N-Channel Enhancement Mode Field Effect Transistor FEATURES30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-220 & TO-263 package.GCEB SERIESCEP SERIESTO-263(DD-PAK)TO-220SABSOLUTE MAXIMUM RATINGS

Datasheet: CEP840A , CEP840G , CEP840L , CEP84A4 , CEP85A3 , CEP85N75 , CEP85N75V , CEP9060N , 5N50 , CEBF634 , CEBF640 , CED01N65 , CED01N65A , CED01N6G , CED01N7 , CED02N65A , CED02N65G .

History: IRF7YSZ44VCM

Keywords - CEP93A3 MOSFET datasheet

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