CEP93A3 Specs and Replacement
Type Designator: CEP93A3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 150 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 980 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO220
CEP93A3 substitution
- MOSFET ⓘ Cross-Reference Search
CEP93A3 datasheet
cep93a3 ceb93a3.pdf
CEP93A3/CEB93A3 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 150A, RDS(ON) = 3.0 m @VGS = 10V. RDS(ON) = 6.0 m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-220 & TO-263 package. G CEB SERIES CEP SERIES TO-263(DD-PAK) TO-220 S ABSOLUTE MAXIMUM RATINGS... See More ⇒
Detailed specifications: CEP840A, CEP840G, CEP840L, CEP84A4, CEP85A3, CEP85N75, CEP85N75V, CEP9060N, IRFP064N, CEBF634, CEBF640, CED01N65, CED01N65A, CED01N6G, CED01N7, CED02N65A, CED02N65G
Keywords - CEP93A3 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
