All MOSFET. CEBF634 Datasheet

 

CEBF634 Datasheet and Replacement


   Type Designator: CEBF634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO263
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CEBF634 Datasheet (PDF)

 ..1. Size:407K  cet
 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEBF634

CEPF634/CEBF634CEIF634/CEFF634N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF634 250V 0.45 8.1A 10VCEBF634 250V 0.45 8.1A 10VCEIF634 250V 0.45 8.1A 10VCEFF634 250V 0.45 8.1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-

 8.1. Size:512K  cet
 cepf630 cebf630.pdf pdf_icon

CEBF634

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEBF634

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXTT8P50 | DMNH10H028SCT | WML11N80M3 | AM7438N | MTP3P25 | SLF740UZ | IRLS4030

Keywords - CEBF634 MOSFET datasheet

 CEBF634 cross reference
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