CEBF634 Specs and Replacement
Type Designator: CEBF634
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 74 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 8.1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
Package: TO263
CEBF634 substitution
- MOSFET ⓘ Cross-Reference Search
CEBF634 datasheet
cepf634 cebf634 ceif634 ceff634.pdf
CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45 8.1A 10V CEBF634 250V 0.45 8.1A 10V CEIF634 250V 0.45 8.1A 10V CEFF634 250V 0.45 8.1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-... See More ⇒
cepf640 cebf640 ceff640.pdf
CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15 19A 10V CEBF640 200V 0.15 19A 10V CEFF640 200V 0.15 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. ... See More ⇒
Detailed specifications: CEP840G, CEP840L, CEP84A4, CEP85A3, CEP85N75, CEP85N75V, CEP9060N, CEP93A3, AO4468, CEBF640, CED01N65, CED01N65A, CED01N6G, CED01N7, CED02N65A, CED02N65G, CED02N6A
Keywords - CEBF634 MOSFET specs
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