All MOSFET. CED01N6G Datasheet

 

CED01N6G MOSFET. Datasheet pdf. Equivalent


   Type Designator: CED01N6G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 1 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.2 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 9.3 Ohm
   Package: TO251

 CED01N6G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED01N6G Datasheet (PDF)

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 ced01n6g ceu01n6g.pdf

CED01N6G CED01N6G

CED01N6G/CEU01N6GN-Channel Enhancement Mode Field Effect TransistorFEATURES600V, 1A, RDS(ON) = 9.3 @VGS = 10V.High power and current handing capability.Lead free product is acquired.TO-251 & TO-252 package.DGDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise notedParameter Symbol Limit UnitsDrain-Source

 7.1. Size:393K  cet
 ceu01n65a ced01n65a.pdf

CED01N6G CED01N6G

CED01N65A/CEU01N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 0.9A, RDS(ON) = 15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 7.2. Size:395K  cet
 ceu01n65 ced01n65.pdf

CED01N6G CED01N6G

CED01N65/CEU01N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 1.2A, RDS(ON) = 10.5 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

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 ced01n7 ceu01n7.pdf

CED01N6G CED01N6G

CED01N7/CEU01N7N-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 0.8A, RDS(ON) = 18 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired. DTO-251 & TO-252 package.GDGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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