CED05N65 MOSFET. Datasheet pdf. Equivalent
Type Designator: CED05N65
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 56 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 4 A
Maximum Junction Temperature (Tj): 150 °C
Rise Time (tr): 13 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 2.4 Ohm
Package: TO251
CED05N65 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED05N65 Datasheet (PDF)
1.1. ceu05n65 ced05n65.pdf 
Size:415K _cet
CED05N65/CEU05N65 N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 4A, RDS(ON) = 2.4? @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe
4.1. ced05n8.pdf Size:363K _upd-mosfet
CED05N8/CEU05N8 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 800V, 3.4A, RDS(ON) = 2.9 Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc
5.1. ced05p03 ceu05p03.pdf Size:365K _cet
CED05P03/CEU05P03 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -15A, RDS(ON) = 70m? @VGS = -10V. RDS(ON) = 120m? @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
