CED05N65 Datasheet and Replacement. Cross Reference Search

CED05N65 Datasheet (PDF)

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CED05N65/CEU05N65N-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 4A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

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CED05N8/CEU05N8N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES800V, 3.4A, RDS(ON) = 2.9 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc

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CED05P03/CEU05P03P-Channel Enhancement Mode Field Effect TransistorFEATURES-30V, -15A, RDS(ON) = 70m @VGS = -10V. RDS(ON) = 120m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

Datasheet: CED02N6G , CED02N7G , CED02N7G-1 , CED02N9 , CED03N8 , CED04N6 , CED04N65 , CED04N7G , 10N60 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 .