All MOSFET. CED08N6A Datasheet

 

CED08N6A Datasheet and Replacement


   Type Designator: CED08N6A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm
   Package: TO251
 

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CED08N6A Datasheet (PDF)

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CED08N6A

CED08N6A/CEU08N6AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES600V, 6.2A, RDS(ON) = 1.25 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS

Datasheet: CED02N9 , CED03N8 , CED04N6 , CED04N65 , CED04N7G , CED05N65 , CED06N7 , CED07N65A , P55NF06 , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 .

History: SM2337PSA | SUN05A50ZD | MDHT4N25URH | AUIRF7739L2TR | IXFM67N10 | IPB049N06L3G

Keywords - CED08N6A MOSFET datasheet

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