CED08N6A PDF and Equivalents Search

 

CED08N6A Specs and Replacement

Type Designator: CED08N6A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6.2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.25 Ohm

Package: TO251

CED08N6A substitution

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CED08N6A datasheet

 ..1. Size:398K  cet
 ceu08n6a ced08n6a.pdf pdf_icon

CED08N6A

CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.2A, RDS(ON) = 1.25 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS ... See More ⇒

Detailed specifications: CED02N9, CED03N8, CED04N6, CED04N65, CED04N7G, CED05N65, CED06N7, CED07N65A, IRF3710, CED12N10, CED12N10L, CED14G04, CEFF634, CEFF640, CEPF634, CEPF640, CEU01N65

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