All MOSFET. CED08N6A Datasheet

 

CED08N6A MOSFET. Datasheet pdf. Equivalent

Type Designator: CED08N6A

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 107 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 6.2 A

Maximum Junction Temperature (Tj): 175 °C

Rise Time (tr): 8 nS

Drain-Source Capacitance (Cd): 120 pF

Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm

Package: TO251

CED08N6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CED08N6A Datasheet (PDF)

0.1. ceu08n6a ced08n6a.pdf Size:398K _cet

CED08N6A
CED08N6A

CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top