CED08N6A MOSFET. Datasheet pdf. Equivalent
Type Designator: CED08N6A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 107 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Drain Current |Id|: 6.2 A
Maximum Junction Temperature (Tj): 175 °C
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 120 pF
Maximum Drain-Source On-State Resistance (Rds): 1.25 Ohm
Package: TO251
CED08N6A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CED08N6A Datasheet (PDF)
0.1. ceu08n6a ced08n6a.pdf 
Size:398K _cet
CED08N6A/CEU08N6A N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 600V, 6.2A, RDS(ON) = 1.25Ω @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead-free plating ; RoHS compliant. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
