All MOSFET. CEFF634 Datasheet

 

CEFF634 Datasheet and Replacement


   Type Designator: CEFF634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220F
 

 CEFF634 substitution

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CEFF634 Datasheet (PDF)

 ..1. Size:407K  cet
 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEFF634

CEPF634/CEBF634CEIF634/CEFF634N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF634 250V 0.45 8.1A 10VCEBF634 250V 0.45 8.1A 10VCEIF634 250V 0.45 8.1A 10VCEFF634 250V 0.45 8.1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEFF634

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

Datasheet: CED04N7G , CED05N65 , CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , 2N7000 , CEFF640 , CEPF634 , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 , CEU02N65A .

Keywords - CEFF634 MOSFET datasheet

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