CEFF634 Specs and Replacement

Type Designator: CEFF634

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 38 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.5 nS

Cossⓘ - Output Capacitance: 95 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm

Package: TO220F

CEFF634 substitution

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CEFF634 datasheet

 ..1. Size:407K  cet
 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEFF634

CEPF634/CEBF634 CEIF634/CEFF634 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF634 250V 0.45 8.1A 10V CEBF634 250V 0.45 8.1A 10V CEIF634 250V 0.45 8.1A 10V CEFF634 250V 0.45 8.1A d 10V D Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-... See More ⇒

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEFF634

CEPF640/CEBF640 CEFF640 N-Channel Enhancement Mode Field Effect Transistor FEATURES Type VDSS RDS(ON) ID @VGS CEPF640 200V 0.15 19A 10V CEBF640 200V 0.15 19A 10V CEFF640 200V 0.15 19A d 10V Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 & TO-220F full-pak for through hole. ... See More ⇒

Detailed specifications: CED04N7G, CED05N65, CED06N7, CED07N65A, CED08N6A, CED12N10, CED12N10L, CED14G04, 2N7000, CEFF640, CEPF634, CEPF640, CEU01N65, CEU01N65A, CEU01N6G, CEU01N7, CEU02N65A

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