All MOSFET. CEPF634 Datasheet

 

CEPF634 Datasheet and Replacement


   Type Designator: CEPF634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO220
 

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CEPF634 Datasheet (PDF)

 ..1. Size:407K  cet
 cepf634 cebf634 ceif634 ceff634.pdf pdf_icon

CEPF634

CEPF634/CEBF634CEIF634/CEFF634N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF634 250V 0.45 8.1A 10VCEBF634 250V 0.45 8.1A 10VCEIF634 250V 0.45 8.1A 10VCEFF634 250V 0.45 8.1A d 10VDSuper high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.TO-220 & TO-

 8.1. Size:512K  cet
 cepf630 cebf630.pdf pdf_icon

CEPF634

 9.1. Size:396K  cet
 cepf640 cebf640 ceff640.pdf pdf_icon

CEPF634

CEPF640/CEBF640 CEFF640N-Channel Enhancement Mode Field Effect TransistorFEATURESType VDSS RDS(ON) ID @VGSCEPF640 200V 0.15 19A 10VCEBF640 200V 0.15 19A 10VCEFF640 200V 0.15 19A d 10VSuper high dense cell design for extremely low RDS(ON).DHigh power and current handing capability.Lead free product is acquired.TO-220 & TO-263 & TO-220F full-pak for through hole.

Datasheet: CED06N7 , CED07N65A , CED08N6A , CED12N10 , CED12N10L , CED14G04 , CEFF634 , CEFF640 , 8205A , CEPF640 , CEU01N65 , CEU01N65A , CEU01N6G , CEU01N7 , CEU02N65A , CEU02N65G , CEU02N6A .

History: SPB80N06S2-08 | TSM2318CX | AO4718 | CEU01N6G | AON6506 | AO4720 | SPI80N06S2-08

Keywords - CEPF634 MOSFET datasheet

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