CEU02N9 Specs and Replacement

Type Designator: CEU02N9

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 70 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.8 Ohm

Package: TO252

CEU02N9 substitution

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CEU02N9 datasheet

 ..1. Size:414K  cet
 ceu02n9 ced02n9.pdf pdf_icon

CEU02N9

CED02N9/CEU02N9 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 900V, 2A, RDS(ON) = 6.8 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C u... See More ⇒

 8.1. Size:666K  cet
 ceu02n7g-1 ced02n7g-1.pdf pdf_icon

CEU02N9

CED02N7G-1/CEU02N7G-1 N-Channel Enhancement Mode Field Effect Transistor FEATURES 720V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. 750V@Tc=150 C Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATING... See More ⇒

 8.2. Size:397K  cet
 ceu02n7g ced02n7g.pdf pdf_icon

CEU02N9

CED02N7G/CEU02N7G N-Channel Enhancement Mode Field Effect Transistor FEATURES 700V, 1.6A, RDS(ON) = 6.75 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless o... See More ⇒

 8.3. Size:417K  cet
 ceu02n65g ced02n65g.pdf pdf_icon

CEU02N9

CED02N65G/CEU02N65G N-Channel Enhancement Mode Field Effect Transistor FEATURES 650V, 1.8A, RDS(ON) = 5.5 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ... See More ⇒

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Detailed specifications: CEU01N6G, CEU01N7, CEU02N65A, CEU02N65G, CEU02N6A, CEU02N6G, CEU02N7G, CEU02N7G-1, AO3401, CEU03N8, CEU04N6, CEU04N65, CEU04N7G, CEU05N65, CEU06N7, CEU07N65A, CEU08N6A

Keywords - CEU02N9 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.