CEU04N7G
MOSFET. Datasheet pdf. Equivalent
Type Designator: CEU04N7G
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 56
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4
V
|Id|ⓘ - Maximum Drain Current: 3.5
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 14
nC
trⓘ - Rise Time: 17
nS
Cossⓘ -
Output Capacitance: 80
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 3.3
Ohm
Package:
TO252
CEU04N7G
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CEU04N7G
Datasheet (PDF)
..1. Size:416K cet
ceu04n7g ced04n7g.pdf
CED04N7G/CEU04N7GN-Channel Enhancement Mode Field Effect TransistorFEATURES700V, 3.5A, RDS(ON) = 3.3 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless ot
8.1. Size:380K cet
ceu04n65 ced04n65.pdf
CED04N65/CEU04N65N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 3.2A, RDS(ON) = 2.8 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc
8.2. Size:382K cet
ceu04n6 ced04n6.pdf
CED04N6/CEU04N6N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES600V, 3.4A, RDS(ON) = 2.4 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc =
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