All MOSFET. CEU07N65A Datasheet

 

CEU07N65A Datasheet and Replacement


   Type Designator: CEU07N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO252
 

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CEU07N65A Datasheet (PDF)

 ..1. Size:400K  cet
 ced07n65a ceu07n65a.pdf pdf_icon

CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 ..2. Size:401K  cet
 ceu07n65a ced07n65a.pdf pdf_icon

CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: CEU02N7G-1 , CEU02N9 , CEU03N8 , CEU04N6 , CEU04N65 , CEU04N7G , CEU05N65 , CEU06N7 , TK10A60D , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , CED21A2 , CED25N15L .

History: PE532DY | OSG60R1K8PF

Keywords - CEU07N65A MOSFET datasheet

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