All MOSFET. CEU07N65A Datasheet

 

CEU07N65A MOSFET. Datasheet pdf. Equivalent


   Type Designator: CEU07N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO252

 CEU07N65A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CEU07N65A Datasheet (PDF)

 ..1. Size:400K  cet
 ced07n65a ceu07n65a.pdf

CEU07N65A CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 ..2. Size:401K  cet
 ceu07n65a ced07n65a.pdf

CEU07N65A CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: 2N90G-TM3-T | IRFU012

 

 
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