All MOSFET. CEU07N65A Datasheet

 

CEU07N65A Datasheet and Replacement


   Type Designator: CEU07N65A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 58 nS
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO252
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CEU07N65A Datasheet (PDF)

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CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect TransistorFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc = 25 C unless

 ..2. Size:401K  cet
 ceu07n65a ced07n65a.pdf pdf_icon

CEU07N65A

CED07N65A/CEU07N65AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES650V, 6A, RDS(ON) = 1.45 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead free product is acquired.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: JCS5N60C | UT8205A | WML11N80M3 | AOT11S65 | IRFS841 | FQU1N60TU | PSMN8R5-100ES

Keywords - CEU07N65A MOSFET datasheet

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