CED16N10L Specs and Replacement

Type Designator: CED16N10L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13.3 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.7 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm

Package: TO251

CED16N10L substitution

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CED16N10L datasheet

 ..1. Size:684K  cet
 ceu16n10l ced16n10l.pdf pdf_icon

CED16N10L

CED16N10L/CEU16N10L PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 115m @VGS = 10V. RDS(ON) = 125m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). D High power and current handing capability. Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-P... See More ⇒

 6.1. Size:623K  cet
 ceu16n10 ced16n10.pdf pdf_icon

CED16N10L

CED16N10/CEU16N10 N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 13.3A, RDS(ON) = 120m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. G D G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless... See More ⇒

Detailed specifications: CEU05N65, CEU06N7, CEU07N65A, CEU08N6A, CEU12N10, CEU12N10L, CEU14G04, CED16N10, AON6380, CED21A2, CED25N15L, CED3060, CED3100, CED3120, CED3172, CED3252, CED4060A

Keywords - CED16N10L MOSFET specs

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