All MOSFET. CED25N15L Datasheet

 

CED25N15L Datasheet and Replacement


   Type Designator: CED25N15L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: TO251
 

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CED25N15L Datasheet (PDF)

 ..1. Size:410K  cet
 ceu25n15l ced25n15l.pdf pdf_icon

CED25N15L

CED25N15L/CEU25N15LN-Channel Enhancement Mode Field Effect TransistorFEATURES150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 8.1. Size:272K  cet
 ced25n02 ceu25n02.pdf pdf_icon

CED25N15L

CED25N02/CEU25N02N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES20V, 25A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 33m @VGS = 2.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PA

Datasheet: CEU07N65A , CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , CED21A2 , IRLB4132 , CED3060 , CED3100 , CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL , CED40N10 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - CED25N15L MOSFET datasheet

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