CED25N15L Specs and Replacement

Type Designator: CED25N15L

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: TO251

CED25N15L substitution

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CED25N15L datasheet

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 ceu25n15l ced25n15l.pdf pdf_icon

CED25N15L

CED25N15L/CEU25N15L N-Channel Enhancement Mode Field Effect Transistor FEATURES 150V, 25A, RDS(ON) = 70m @VGS = 10V. RDS(ON) = 80m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI... See More ⇒

 8.1. Size:272K  cet
 ced25n02 ceu25n02.pdf pdf_icon

CED25N15L

CED25N02/CEU25N02 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 20V, 25A, RDS(ON) = 23m @VGS = 4.5V. RDS(ON) = 33m @VGS = 2.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PA... See More ⇒

Detailed specifications: CEU07N65A, CEU08N6A, CEU12N10, CEU12N10L, CEU14G04, CED16N10, CED16N10L, CED21A2, CS150N03A8, CED3060, CED3100, CED3120, CED3172, CED3252, CED4060A, CED4060AL, CED40N10

Keywords - CED25N15L MOSFET specs

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