CED3060 Specs and Replacement
Type Designator: CED3060
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 330 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: TO251
CED3060 substitution
- MOSFET ⓘ Cross-Reference Search
CED3060 datasheet
ceu3060 ced3060.pdf
CED3060/CEU3060 N-Channel Enhancement Mode Field Effect Transistor FEATURES 30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXI... See More ⇒
ced30p10 ceu30p10.pdf
CED30P10/CEU30P10 P-Channel Enhancement Mode Field Effect Transistor FEATURES -100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE ... See More ⇒
Detailed specifications: CEU08N6A, CEU12N10, CEU12N10L, CEU14G04, CED16N10, CED16N10L, CED21A2, CED25N15L, NCEP15T14, CED3100, CED3120, CED3172, CED3252, CED4060A, CED4060AL, CED40N10, CED4204
Keywords - CED3060 MOSFET specs
CED3060 cross reference
CED3060 equivalent finder
CED3060 pdf lookup
CED3060 substitution
CED3060 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
