All MOSFET. CED3060 Datasheet

 

CED3060 Datasheet and Replacement


   Type Designator: CED3060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO251
 

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CED3060 Datasheet (PDF)

 ..1. Size:392K  cet
 ceu3060 ced3060.pdf pdf_icon

CED3060

CED3060/CEU3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 9.1. Size:417K  cet
 ced30p10 ceu30p10.pdf pdf_icon

CED3060

CED30P10/CEU30P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

Datasheet: CEU08N6A , CEU12N10 , CEU12N10L , CEU14G04 , CED16N10 , CED16N10L , CED21A2 , CED25N15L , IRFP450 , CED3100 , CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL , CED40N10 , CED4204 .

History: SVG086R0NL5TR | 7N80G-TF3T-T | HGP058N08SL | HTD410P06 | SVS65R280SD4 | PHK4NQ10T | 2SK2759-01R

Keywords - CED3060 MOSFET datasheet

 CED3060 cross reference
 CED3060 equivalent finder
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