CED540L Datasheet and Replacement
Type Designator: CED540L
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.1 nS
Cossⓘ - Output Capacitance: 199 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: TO251
CED540L substitution
CED540L Datasheet (PDF)
ceu540l ced540l.pdf
CED540L/CEU540LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 25A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM
ceu540n ced540n.pdf
CED540N/CEU540NN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 25A, RDS(ON) = 53m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other
Datasheet: CED3100 , CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL , CED40N10 , CED4204 , IRF1407 , CED540N , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 .
Keywords - CED540L MOSFET datasheet
CED540L cross reference
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CED540L replacement
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