All MOSFET. CED540N Datasheet

 

CED540N Datasheet and Replacement


   Type Designator: CED540N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 56 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 200 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm
   Package: TO251
 

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CED540N Datasheet (PDF)

 ..1. Size:394K  cet
 ceu540n ced540n.pdf pdf_icon

CED540N

CED540N/CEU540NN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 25A, RDS(ON) = 53m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other

 8.1. Size:679K  cet
 ceu540l ced540l.pdf pdf_icon

CED540N

CED540L/CEU540LN-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 25A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM

Datasheet: CED3120 , CED3172 , CED3252 , CED4060A , CED4060AL , CED40N10 , CED4204 , CED540L , 5N65 , CED55N10 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CED6426 .

History: NVMFD020N06C | AFP8452 | HM120N04D | IPD90N04S3-H4

Keywords - CED540N MOSFET datasheet

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