CED540N Specs and Replacement

Type Designator: CED540N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 56 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.053 Ohm

Package: TO251

CED540N substitution

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CED540N datasheet

 ..1. Size:394K  cet
 ceu540n ced540n.pdf pdf_icon

CED540N

CED540N/CEU540N N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 53m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless other... See More ⇒

 8.1. Size:679K  cet
 ceu540l ced540l.pdf pdf_icon

CED540N

CED540L/CEU540L N-Channel Enhancement Mode Field Effect Transistor FEATURES 100V, 25A, RDS(ON) = 50m @VGS = 10V. RDS(ON) = 53m @VGS = 5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: CED3120, CED3172, CED3252, CED4060A, CED4060AL, CED40N10, CED4204, CED540L, 2SK3568, CED55N10, CED6056, CED6060N, CED6086, CED6186, CED630N, CED6336, CED6426

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