CED55N10 Datasheet and Replacement
Type Designator: CED55N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 240 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
Package: TO251
CED55N10 substitution
CED55N10 Datasheet (PDF)
ceu55n10 ced55n10.pdf

CED55N10/CEU55N10N-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES100V, 55A, RDS(ON) = 16m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead-free plating ; RoHS compliant.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc
Datasheet: CED3172 , CED3252 , CED4060A , CED4060AL , CED40N10 , CED4204 , CED540L , CED540N , 75N75 , CED6056 , CED6060N , CED6086 , CED6186 , CED630N , CED6336 , CED6426 , CED655 .
History: CEM8958 | RQ1A060ZPTR | CED6086 | HFS8N60U | CED40N10 | HSM3214 | FRE9260D
Keywords - CED55N10 MOSFET datasheet
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History: CEM8958 | RQ1A060ZPTR | CED6086 | HFS8N60U | CED40N10 | HSM3214 | FRE9260D



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