CED55N10 Specs and Replacement

Type Designator: CED55N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm

Package: TO251

CED55N10 substitution

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CED55N10 datasheet

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 ceu55n10 ced55n10.pdf pdf_icon

CED55N10

CED55N10/CEU55N10 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 100V, 55A, RDS(ON) = 16m @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead-free plating ; RoHS compliant. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABSOLUTE MAXIMUM RATINGS Tc ... See More ⇒

Detailed specifications: CED3172, CED3252, CED4060A, CED4060AL, CED40N10, CED4204, CED540L, CED540N, 10N65, CED6056, CED6060N, CED6086, CED6186, CED630N, CED6336, CED6426, CED655

Keywords - CED55N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.