CEU3060 Datasheet and Replacement
Type Designator: CEU3060
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 62.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 75 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
Package: TO252
CEU3060 substitution
CEU3060 Datasheet (PDF)
ceu3060 ced3060.pdf

CED3060/CEU3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI
ced30p10 ceu30p10.pdf

CED30P10/CEU30P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE
Datasheet: CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , IRF520 , CEU3100 , CEU3120 , CEU3172 , CEU3252 , CEU4060A , CEU4060AL , CEU40N10 , CEU4204 .
History: BL30N65-F
Keywords - CEU3060 MOSFET datasheet
CEU3060 cross reference
CEU3060 equivalent finder
CEU3060 lookup
CEU3060 substitution
CEU3060 replacement
History: BL30N65-F



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