All MOSFET. CEU3060 Datasheet

 

CEU3060 Datasheet and Replacement


   Type Designator: CEU3060
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 75 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0066 Ohm
   Package: TO252
 

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CEU3060 Datasheet (PDF)

 ..1. Size:392K  cet
 ceu3060 ced3060.pdf pdf_icon

CEU3060

CED3060/CEU3060N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 75A , RDS(ON) = 6.6m @VGS = 10V. RDS(ON) = 9.5m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXI

 9.1. Size:417K  cet
 ced30p10 ceu30p10.pdf pdf_icon

CEU3060

CED30P10/CEU30P10P-Channel Enhancement Mode Field Effect TransistorFEATURES-100V, -30A, RDS(ON) = 76m @VGS = -10V. RDS(ON) = 92m @VGS = -4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE

Datasheet: CED6336 , CED6426 , CED655 , CED730G , CEU16N10 , CEU16N10L , CEU21A2 , CEU25N15L , IRF520 , CEU3100 , CEU3120 , CEU3172 , CEU3252 , CEU4060A , CEU4060AL , CEU40N10 , CEU4204 .

History: MML60R190PTH | IPB120N08S4-03 | IXFV110N10P | CS65N20-30 | SQM90142E | DMG8880LSS | C3M0065100K

Keywords - CEU3060 MOSFET datasheet

 CEU3060 cross reference
 CEU3060 equivalent finder
 CEU3060 lookup
 CEU3060 substitution
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