All MOSFET. CEU40N10 Datasheet

 

CEU40N10 Datasheet and Replacement


   Type Designator: CEU40N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 93.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO252
 

 CEU40N10 substitution

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CEU40N10 Datasheet (PDF)

 ..1. Size:405K  cet
 ceu40n10 ced40n10.pdf pdf_icon

CEU40N10

CED40N10/CEU40N10N-Channel Enhancement Mode Field Effect TransistorFEATURES100V, 37A, RDS(ON) = 32m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

 9.1. Size:397K  cet
 ceu4060al ced4060al.pdf pdf_icon

CEU40N10

CED4060AL/CEU4060ALN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 16A, RDS(ON) = 75m @VGS = 10V. RDS(ON) = 90m @VGS = 5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIM

 9.2. Size:398K  cet
 ced4060a ceu4060a.pdf pdf_icon

CEU40N10

CED4060A/CEU4060AN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 15A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 9.3. Size:398K  cet
 ceu4060a ced4060a.pdf pdf_icon

CEU40N10

CED4060A/CEU4060AN-Channel Enhancement Mode Field Effect TransistorFEATURES60V, 15A, RDS(ON) = 85m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

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Datasheet: CEU25N15L , CEU3060 , CEU3100 , CEU3120 , CEU3172 , CEU3252 , CEU4060A , CEU4060AL , IRFZ46N , CEU4204 , CEU540L , CEU540N , CEU55N10 , CEU6056 , CEU6060N , CEU6086 , CEU6186 .

History: IRHN7150 | NP82N10PUF | 3SK125P | RJK0630JPE

Keywords - CEU40N10 MOSFET datasheet

 CEU40N10 cross reference
 CEU40N10 equivalent finder
 CEU40N10 lookup
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 CEU40N10 replacement

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