CEU85A3 Datasheet and Replacement
Type Designator: CEU85A3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 70 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 25 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 80 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 330 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: TO252
CEU85A3 substitution
CEU85A3 Datasheet (PDF)
..1. Size:274K cet
ceu85a3 ced85a3.pdf
ceu85a3 ced85a3.pdf
CED85A3/CEU85A3N-Channel Enhancement Mode Field Effect TransistorFEATURES25V, 80A, RDS(ON) = 6m @VGS = 10V. RDS(ON) = 9m @VGS = 4.5V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM R
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History: UTD452
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