All MOSFET. CEUF634 Datasheet

 

CEUF634 Datasheet and Replacement


   Type Designator: CEUF634
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.5 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.45 Ohm
   Package: TO252
 

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CEUF634 Datasheet (PDF)

 ..1. Size:390K  cet
 ceuf634 cedf634.pdf pdf_icon

CEUF634

CEDF634/CEUF634N-Channel Enhancement Mode Field Effect TransistorFEATURES250V, 6.7A, RDS(ON) = 450m @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESTO-252(D-PAK) STO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless othe

 9.1. Size:368K  cet
 ceuf640 cedf640.pdf pdf_icon

CEUF634

CEDF640/CEUF640N-Channel Enhancement Mode Field Effect TransistorFEATURES200V, 15A, RDS(ON) = 0.15 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.DLead free product is acquired.TO-251 & TO-252 package.D GGSCEU SERIESCED SERIESSTO-252(D-PAK)TO-251(I-PAK)ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless oth

Datasheet: CEU75A3 , CEU830G , CEU83A3 , CEU83A3G , CEU840A , CEU84A4 , CEU85A3 , CEU93A3 , IRFP460 , CEUF640 , CED73A3G , CED740A , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A .

History: AP9918GJ | 3SK142Q | UTM2054G-AB3-R | STD4NK50ZT4 | CEU84A4 | RJK2062JPK | AP98T03GW-HF

Keywords - CEUF634 MOSFET datasheet

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