All MOSFET. FDD6680 Datasheet

 

FDD6680 MOSFET. Datasheet pdf. Equivalent


   Type Designator: FDD6680
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 19 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 510 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-252

 FDD6680 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDD6680 Datasheet (PDF)

Datasheet: FDC6561AN , FDC658P , FDD5202P , FDD5680 , FDD5690 , FDD6030L , FDD6612A , FDD6670A , RU6888R , FDD6680A , FDD6690A , AS3402 , FDG311N , FDG312P , FDG313N , FDG314P , FDG315N .

 

 
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