FDD6680 - описание и поиск аналогов

July 1999 FDD6680 N-Channel Logic Level PWM Optimized PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET has been designed 55 A, 30 V. RDS(on) = 0.010 @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(on) = 0.015 @ VGS = 4.5 V. converters using either synchronous or conventional switching PWM controllers. Optimi

FDD6680 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET ABSOLU

isc N-Channel MOSFET Transistor FDD6680 FEATURES Drain Current I =46A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =10m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

April 2008 FDD6680AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680AS is designed to replace a single 55 A, 30 V RDS(ON) max= 10.5 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) max= 13.0 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

December 2000 FDD6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDD6680S is designed to replace a single 55 A, 30 V RDS(ON) = 11 m @ VGS = 10 V MOSFET and Schottky diode in synchronous DC DC RDS(ON) = 17 m @ VGS = 4.5 V power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low Inclu

February 2000 FDD6680A N-Channel, Logic Level, PowerTrench MOSFET Features General Description This N-Channel Logic level MOSFET is produced using 56 A, 30 V. RDS(ON) = 0.0095 @ VGS = 10 V Fairchild Semiconductor's advanced PowerTrench process RDS(ON) = 0.0130 @ VGS = 4.5 V. that has been especially tailored to minimize the on-state resistance and y

isc N-Channel MOSFET Transistor FDD6680AS FEATURES Drain Current I =55A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =10.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

isc N-Channel MOSFET Transistor FDD6680S FEATURES Drain Current I =55A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =11m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

isc N-Channel MOSFET Transistor FDD6680A FEATURES Drain Current I =56A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =9.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid