CED73A3G Specs and Replacement

Type Designator: CED73A3G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 57 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 265 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.009 Ohm

Package: TO251

CED73A3G substitution

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CED73A3G datasheet

 ..1. Size:393K  cet
 ceu73a3g ced73a3g.pdf pdf_icon

CED73A3G

CED73A3G/CEU73A3G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 30V, 57A, RDS(ON) = 9m @VGS = 10V. RDS(ON) = 16m @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired. TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES S TO-252(D-PAK) TO-251(I-PAK) ABS... See More ⇒

 9.1. Size:408K  cet
 ceu730g ced730g.pdf pdf_icon

CED73A3G

CED730G/CEU730G N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 400V, 5A, RDS(ON) = 1 @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. D TO-251 & TO-252 package. D G G S CEU SERIES CED SERIES TO-252(D-PAK) TO-251(I-PAK) S ABSOLUTE MAXIMUM RATINGS Tc = 25 C un... See More ⇒

Detailed specifications: CEU83A3, CEU83A3G, CEU840A, CEU84A4, CEU85A3, CEU93A3, CEUF634, CEUF640, IRF640, CED740A, CED75A3, CED830G, CED83A3, CED83A3G, CED840A, CED84A4, CED85A3

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