All MOSFET. CED740A Datasheet

 

CED740A Datasheet and Replacement


   Type Designator: CED740A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 400 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 135 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.55 Ohm
   Package: TO251
 

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CED740A Datasheet (PDF)

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CED740A

CED740A/CEU740AN-Channel Enhancement Mode Field Effect Transistor PRELIMINARYFEATURES400V, 9A, RDS(ON) = 0.55 @VGS = 10V.Super high dense cell design for extremely low RDS(ON).High power and current handing capability.Lead-free plating ; RoHS compliant.DTO-251 & TO-252 package.DGGSCEU SERIESCED SERIESTO-252(D-PAK)TO-251(I-PAK)SABSOLUTE MAXIMUM RATINGS Tc =

Datasheet: CEU83A3G , CEU840A , CEU84A4 , CEU85A3 , CEU93A3 , CEUF634 , CEUF640 , CED73A3G , IRF1404 , CED75A3 , CED830G , CED83A3 , CED83A3G , CED840A , CED84A4 , CED85A3 , CED93A3 .

History: CED830G | IPN80R2K4P7 | MTP5103N3 | FDFMA2P853 | AOT16N50 | IPD90N06S4L-03 | MTP5614N6

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